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| LT1200 Low Power High Speed Operational Amplifier FEATURES s s s s s s s s s s s s DESCRIPTIO 1mA Supply Current 50V/s Slew Rate 11MHz Gain Bandwidth Unity Gain Stable 430ns Settling Time to 0.1%, 10V Step 6V/mV DC Gain, RL = 2k 1mV Maximum Input Offset Voltage 50nA Input Offset Current 500nA Input Bias Current 12V Minimum Output Swing into 2k Wide Supply Range 2.5V to 15V Drives All Capacitive Loads The LT1200 is a low power high speed operational amplifier with excellent DC performance. The LT1200 features much lower supply current than devices with comparable bandwidth and slew rate. The circuit is a single gain stage with outstanding settling characteristics. The fast settling time makes the circuit an ideal choice for data acquisition systems. The output is capable of driving a 2k load to 12V with 15V supplies and a 500 load to 3V on 5V supplies. The circuit is also capable of driving large capacitive loads which makes it useful in buffer or cable driver applications. The LT1200 is a member of a family of fast, high performance amplifiers that employ Linear Technology Corporation's advanced bipolar complementary processing. APPLICATI s s s s S Wideband Amplifiers Buffers Active Filters Data Acquisition Systems TYPICAL APPLICATI DAC Current to Voltage Converter 20pF Inverter Pulse Response 5k DAC-08 TYPE - LT1200 VOUT + 0.1F 5k 1 LSB SETTLING = 550ns LT1200 TA01 U UO UO 1 LT1200 ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO TOP VIEW NULL 1 -IN 2 +IN 3 V- 4 8 7 6 5 NULL V+ OUT NC Total Supply Voltage (V + to V -) ............................. 36V Differential Input Voltage ........................................ 6V Input Voltage .......................................................... VS Output Short Circuit Duration (Note 1) ........... Indefinite Operating Temperature Range LT1200C ............................................... 0C to 70C Maximum Junction Temperature Plastic Package ............................................. 150C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec.)................ 300C ORDER PART NUMBER LT1200CN8 LT1200CS8 S8 PACKAGE N8 PACKAGE 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC LT1200 PO ELECTRICAL CHARACTERISTICS SYMBOL VOS IOS IB en in RIN CIN PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Noise Voltage Input Noise Current Input Resistance Input Resistance Input Capacitance Input Voltage Range+ Input Voltage Range - CMRR PSRR AVOL VOUT IOUT SR GBW tr, tf Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain Output Swing Output Current Slew Rate Full Power Bandwidth Gain Bandwidth Rise Time, Fall Time Overshoot Propagation Delay ts RO IS Settling Time Output Resistance Supply Current VS = 15V, TA = 25C, VCM = 0V unless otherwise noted. MIN TYP 0.5 50 0.5 MAX 1.0 100 1.0 UNITS mV nA A nV/Hz pA/Hz M k pF V -12 V dB dB V/mV V/mV V mA V/s MHz MHz ns % ns ns 1.4 mA CONDITIONS (Note 2) f = 10kHz f = 10kHz VCM = 12V Differential 12 VCM = 12V VS = 5V to 15V VOUT = 10V, RL = 5k VOUT = 10V, RL = 2k RL = 2k VOUT = 12V AVCL = -2, (Note 3) 10V Peak, (Note 4) f = 0.1MHz AVCL = +1, 10% to 90%, 0.1V AVCL = +1, 0.1V 50% VIN to 50% VOUT 10V Step, 0.1% AVCL = +1, f = 0.1MHz 80 80 4 3 12.0 6 30 48 30 0.7 90 500 2 14 -13 100 90 8 6 13.8 12 50 0.8 11 18 25 18 430 1.1 1 2 U W U U WW W LT1200 ELECTRICAL CHARACTERISTICS VS = 5V, TA = 25C, VCM = 0V unless otherwise noted. SYMBOL VOS IOS IB PARAMETER Input Offset Voltage Input Offset Current Input Bias Current Input Voltage Range+ Input Voltage Range CMRR AVOL VOUT IOUT SR GBW tr, tf - CONDITIONS (Note 2) MIN TYP 1.0 50 0.5 MAX 3.0 100 1.0 -2.5 UNITS mV nA A V V dB V/mV V/mV V mA V/s MHz MHz ns % ns ns 2.5 VCM = 2.5V VOUT = 2.5V, RL = 2k VOUT = 2.5V, RL = 1k RL = 500 VOUT = 3V AVCL = -2, (Note 3) 3V Peak, (Note 4) f = 0.1MHz AVCL = +1, 10%-90%, 0.1V AVCL = +1, 0.1V 50% VIN to 50% VOUT -2.5V to 2.5V, 0.1% 80 2.5 2.0 3.0 6 20 4 -3 100 5 4 4.0 12 33 1.7 8.5 23 20 23 300 1 1.4 Common Mode Rejection Ratio Large Signal Voltage Gain Output Voltage Output Current Slew Rate Full Power Bandwidth Gain Bandwidth Rise Time, Fall Time Overshoot Propagation Delay ts IS Settling Time Supply Current mA ELECTRICAL CHARACTERISTICS SYMBOL VOS PARAMETER Input Offset Voltage Input VOS Drift IOS IB CMRR PSRR AVOL Input Offset Current Input Bias Current Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain CONDITIONS 0C TA 70C, VCM = 0V unless otherwise noted. MIN TYP 0.5 1.0 11 50 0.5 80 80 3.5 2.5 2.0 1.6 12.0 3.0 6 6 27 18 100 90 8 6 5 4 13.8 4.0 12 12 50 33 1 1.6 MAX 2.0 3.5 150 1.2 UNITS mV mV V/C nA A dB dB V/mV V/mV V/mV V/mV V V mA mA V/ms V/ms mA VS = 15V, (Note 2) VS = 5V, (Note 2) VS = 15V and VS = 5V VS = 15V and VS = 5V VS = 15V, VCM = 12V; VS = 5V, VCM = 2.5V VS = 5V to 15V VS = 15V, VOUT = 10V, RL = 5k VS = 15V, VOUT = 10V, RL = 2k VS = 5V, VOUT = 2.5V, RL = 2k VS = 5V, VOUT = 2.5V, RL = 1k VS = 15V, RL = 2k VS = 5V, RL = 500 VS = 15V, VOUT = 12V VS = 5V, VOUT = 3V VS = 15V, A VCL = -2, (Note 3) VS = 5V, A VCL = -2, (Note 3) VS = 15V and VS = 5V VOUT IOUT SR IS Output Swing Output Current Slew Rate Supply Current Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely. Note 2: Input offset voltage is tested with automated test equipment in <1 second. Note 3: Slew rate is measured in a gain of -2 between 10V on the output with 6V on the input for 15V supplies and 2V on the output with 1.75V on the input for 5V supplies. Note 4: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2Vp. 3 LT1200 TYPICAL PERFOR A CE CHARACTERISTICS Input Common Mode Range vs Supply Voltage 20 MAGNITUDE OF INPUT VOLTAGE (V) SUPPLY CURRENT (mA) 15 1.05 OUTPUT VOLTAGE SWING (V) TA = 25C VOS < 1mV 10 +VCM -VCM 5 0 0 5 10 15 20 LT1200 G01 SUPPLY VOLTAGE (V) Output Voltage Swing vs Resistive Load 30 OUTPUT VOLTAGE SWING (Vp-p) 25 INPUT BIAS CURRENT (nA) 20 VS = 15V 15 10 VS = 5V 5 0 100 TA = 25C VOS = 30mV 1k 10k 100k LT1200 G04 OPEN LOOP GAIN (dB) LOAD RESISTANCE () Supply Current vs Temperature 1.75 VS = 15V 1.50 540 560 INPUT BIAS CURRENT (nA) VS = 15V I + + IB- IB = B 2 OUTPUT SHORT CIRCUIT CURRENT (mA) SUPPLY CURRENT (mA) 1.25 1.00 0.75 0.50 0.25 -50 -25 0 25 50 75 TEMPERATURE (C) LT1200 G07 4 UW 100 Supply Current vs Supply Voltage 1.10 TA = 25C 15 20 Output Voltage Swing vs Supply Voltage TA = 25C RL = 2k VOS = 30mV +VSW 10 -VSW 5 1.00 0.95 0.90 0 5 10 15 20 LT1200 G02 0 0 5 10 15 20 LT1200 G03 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Input Bias Current vs Input Common Mode Voltage 1000 VS = 15V TA = 25C IB+ + IB- IB = 2 90 Open Loop Gain vs Resistive Load TA = 25C 80 VS = 15V 70 VS = 5V 750 500 60 250 50 0 -15 -10 -5 0 5 10 15 40 100 1k 10k 100k LT1200 G06 INPUT COMMON MODE VOLTAGE (V) LT1200 G05 LOAD RESISTANCE () Input Bias Current vs Temperature 35 Output Short-Circuit Current vs Temperature VS = 5V 30 25 SOURCE 20 SINK 15 10 5 -50 520 500 480 460 440 -50 125 -25 0 25 50 75 100 125 -25 0 25 50 75 100 125 TEMPERATURE (C) LT1200 G08 TEMPERATURE (C) LT1200 G09 LT1200 TYPICAL PERFOR A CE CHARACTERISTICS Input Noise Spectral Density 1000 100 POWER SUPPLY REJECTION RATIO (dB) COMMON MODE REJECTION RATIO (dB) INPUT VOLTAGE NOISE (nV/Hz) VS = 15V TA = 25C AV = +101 RS = 100k 100 en 10 10 in 1 10 100 1k FREQUENCY (Hz) 10k Voltage Gain and Phase vs Frequency 80 VS = 15V 60 VS = 5V VS = 15V VS = 5V 20 40 80 100 VOLTAGE GAIN (dB) OUTPUT SWING (V) 4 2 0 -2 -4 -6 -8 VOLTAGE MAGNITUDE (dB) 40 0 TA = 25C -20 100 1k 10k 100k 1M 10M FREQUENCY (Hz) LT1200 G13 Closed Loop Output Impedance vs Frequency 1000 VS = 15V TA = 25C AV = +1 100 11.3 OUTPUT IMPEDANCE () GAIN BANDWIDTH (MHz) SLEW RATE (V/s) 10 1 0.1 10k 100k 1M FREQUENCY (Hz) 10M UW LT1200 G10 Power Supply Rejection Ratio vs Frequency 100 VS = 15V TA = 25C 80 +PSRR 60 -PSRR 40 120 100 80 60 40 20 Common Mode Rejection Ratio vs Frequency VS = 15V TA = 25C INPUT CURRENT NOISE (pA/Hz) PHASE MARGIN (DEGREES) 1 20 0.1 100k 0 100 1k 10k 100k 1M 10M 100M 0 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) LT1200 G11 FREQUENCY (Hz) LT1200 G12 Output Swing vs Settling Time 10 8 6 AV = +1 AV = -1 VS = 15V TA = 25C 10mV SETTLING Frequency Response vs Capacitive Load 10 8 6 4 2 0 -2 -4 -6 -8 C = 1000pF C=0 C = 500pF C = 100pF C = 50pF VS = 15V TA = 25C AV = -1 60 20 AV = +1 AV = -1 0 100M -10 0 100 200 300 400 500 600 SETTLING TIME (ns) LT1200G14 -10 100k 1M 10M 100M LT1200 G15 FREQUENCY (Hz) Gain Bandwidth vs Temperature 90 VS = 15V 11.2 11.1 11.0 10.9 10.8 10.7 -50 Slew Rate vs Temperature VS = 15V AV = -1 80 70 -SR 60 +SR 50 40 30 -50 100M LT1200 G16 -25 0 25 50 75 100 125 -25 0 25 50 75 100 125 TEMPERATURE (C) LT1200 G17 TEMPERATURE (C) LT1200 G18 5 LT1200 APPLICATI S I FOR ATIO U Capacitive Loading The LT1200 is stable with all capacitive loads. This is accomplished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases both the bandwidth and phase margin decrease so there will be peaking in the frequency domain and in the transient response. The photo of the small signal response with 1000pF load shows 50% peaking. The large signal response with a 10,000pF load shows the output slew rate being limited by the shortcircuit current. AV = -1, CL = 1000pF AV = +1, CL = 10,000pF The LT1200 may be inserted directly into many applications, provided that the nulling circuitry is removed. The suggested nulling circuit for the LT1200 is shown below. Offset Nulling V+ 5k 1 3 0.1F 8 LT1200 2 76 4 0.1F V- LT1200 TA03 + - Layout and Passive Components As with any high speed operational amplifier, care must be taken in board layout in order to obtain maximum performance. Key layout issues include: use of a ground plane, minimization of stray capacitance at the input pins, short lead lengths, RF-quality bypass capacitors located close to the device (typically 0.01F to 0.1F), and use of low ESR bypass capacitors for high drive current applications (typically 1F to 10F tantalum). Sockets should be avoided when maximum frequency performance is required, although low-profile sockets can provide reasonable performance up to 50MHz. For more details see Design Note 50. The parallel combination of the feedback resistor and gain setting resistor on the inverting input combine with the input capacitance to form a pole which can cause peaking. If feedback resistors greater than 5k are used, a parallel capacitor of value: C F RG x C IN RF should be used to cancel the input pole and optimize dynamic performance. For unity gain applications where a large feedback resistor is used, CF should be greater than or equal to CIN. 6 W U UO DAC Current to Voltage Converter The wide bandwidth, high slew rate and fast settling time of the LT1200 make it well suited for current to voltage conversion after current output D/A converters. A typical application is shown on page one with a DAC-08 type converter with a full-scale output of 2mA. A compensation capacitor is used across the feedback resistor to null the pole at the inverting input caused by the DAC output capacitance. The combination of the LT1200 and DAC settles to 40mV in 550ns for a 10V to 0V step and 450ns for a 0V to 10V step. Input Considerations Resistors in series with the inputs are recommended for the LT1200 in applications where the differential input voltage exceeds 6V continuously or on a transient basis. An example would be in noninverting configurations with high input slew rates or when driving heavy capacitive loads. The use of balanced source resistance at each input is recommended for applications where DC accuracy must be maximized. LT1200 APPLICATI S I FOR ATIO Transient Response The LT1200 gain bandwidth is 11MHz when measured at 100kHz. The actual frequency response in unity gain is considerably higher than 11MHz due to peaking caused by a second pole beyond the unity gain crossover. This is reflected in the 45 phase margin and shows up as overshoot in the unity gain small signal transient response. Higher noise gain configurations exhibit less overshoot as seen in the inverting gain of one response. Small Signal, AV = +1 Small Signal, AV = -1 The large signal reponse in both inverting and noninverting gain shows symmetrical slewing characteristics. Normally the noninverting response has a much faster rising edge due to the rapid change in input common mode voltage which affects the tail current of the input differential pair. Slew enhancement circuitry has been added to the LT1200 so that the falling edge slew rate is enhanced which balances the noninverting slew rate. TYPICAL APPLICATI R2 6.19k S R1 20k 100kHz, 2nd Order Butterworth Filter R2 2k C2 100pF R1 6.19k VIN C1 500pF R3 8.25k - LT1200 VOUT + AV = LT1200 TA04 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U The large signal, unity gain response shows the characteristic noninverting response of an op amp with an input slew rate much faster than that of the amplifier. In this case the input is slewing at greater than 1000V/s. Large Signal, AV = +1 Large Signal, AV = -1 W UO U UO Low Voltage Operation The LT1200 is functional at room temperature with only 3V of total supply voltage. Under this condition, however, the undistorted output swing is only 0.8VP-P. A more realistic condition is operation at 2.5V supplies (or 5V and ground). Under these conditions at room temperature the typical input common mode range is +2.2V to -1.5V, and a 1MHz, 2.5VP-P sine wave can be faithfully reproduced. With 5V total supply voltage the gain bandwidth is reduced to 6MHz and the slew rate is reduced to 20V/s. Two Op Amp Instrumentation Amplifier R5 432 R4 20k - LT1200 R3 2k - LT1200 VOUT - VIN + + + R4 1 + 1 R2 + R3 + R2 + R3 R3 2 R1 R4 R5 [ ( ) ] = 104 LT1200 TA05 TRIM R5 FOR GAIN TRIM R1 FOR COMMON MODE REJECTION BW = 125kHz 7 LT1200 SI PLIFIED SCHE ATIC V+ 7 NULL 1 8 +IN 3 V- 4 LT1200 SS PACKAGE DESCRIPTIO 0.300 - 0.320 (7.620 - 8.128) 0.045 - 0.065 (1.143 - 1.651) 0.009 - 0.015 (0.229 - 0.381) 0.065 (1.651) TYP 0.125 (3.175) MIN 0.020 (0.508) MIN ( +0.025 0.325 -0.015 +0.635 8.255 -0.381 ) 0.045 0.015 (1.143 0.381) 0.100 0.010 (2.540 0.254) 0.010 - 0.020 x 45 (0.254 - 0.508) 0.008 - 0.010 (0.203 - 0.254) 0.016 - 0.050 0.406 - 1.270 0.053 - 0.069 (1.346 - 1.752) 0.004 - 0.010 (0.101 - 0.254) 0.228 - 0.244 (5.791 - 6.197) 0- 8 TYP 0.014 - 0.019 (0.355 - 0.483) 8 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 U W W BIAS 1 2 -IN BIAS 2 6 OUT Dimensions in inches (millimeters) unless otherwise noted. N8 Package 8-Lead Plastic DIP 0.130 0.005 (3.302 0.127) 0.400 (10.160) MAX 8 7 6 5 0.250 0.010 (6.350 0.254) TJ MAX 1 2 3 4 N8 0392 JA 130C/W 150C 0.018 0.003 (0.457 0.076) S8 Package 8-Lead Plastic SOIC 0.189 - 0.197 (4.801 - 5.004) 8 7 6 5 0.050 (1.270) BSC 0.150 - 0.157 (3.810 - 3.988) TJ MAX 150C 1 2 3 4 S8 0392 JA 220C/W LT/GP 0492 10K REV 0 (c) LINEAR TECHNOLOGY CORPORATION 1992 |
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